FDMC510P
| Parameters | |
|---|---|
| Avalanche Energy Rating (Eas) | 37 mJ |
| Terminal Position | DUAL |
| JESD-30 Code | S-PDSO-N5 |
| Height | 750μm |
| Length | 3.3mm |
| Number of Elements | 1 |
| Width | 3.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| Power Dissipation-Max | 2.3W Ta 41W Tc |
| RoHS Status | ROHS3 Compliant |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 41W |
| Case Connection | DRAIN |
| Turn On Delay Time | 15 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8m Ω @ 12A, 4.5V |
| Factory Lead Time | 1 Week |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Gold |
| Input Capacitance (Ciss) (Max) @ Vds | 7860pF @ 10V |
| Mount | Surface Mount |
| Current - Continuous Drain (Id) @ 25°C | 12A Ta 18A Tc |
| Mounting Type | Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs | 116nC @ 4.5V |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Rise Time | 34ns |
| Weight | 165.33333mg |
| Transistor Element Material | SILICON |
| Drain to Source Voltage (Vdss) | 20V |
| Operating Temperature | -55°C~150°C TJ |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Vgs (Max) | ±8V |
| Series | PowerTrench® |
| Fall Time (Typ) | 170 ns |
| JESD-609 Code | e4 |
| Turn-Off Delay Time | 338 ns |
| Pbfree Code | yes |
| Part Status | Active |
| Continuous Drain Current (ID) | 12A |
| Threshold Voltage | -500mV |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Gate to Source Voltage (Vgs) | 8V |
| Number of Terminations | 5 |
| Drain Current-Max (Abs) (ID) | 54A |
| ECCN Code | EAR99 |
| Drain to Source Breakdown Voltage | -20V |
| Subcategory | Other Transistors |
| Pulsed Drain Current-Max (IDM) | 50A |
| Technology | MOSFET (Metal Oxide) |
See Relate Datesheet
