Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 9 hours ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Number of Pins | 8 |
Weight | 180mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2017 |
Series | PowerTrench® |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
JESD-30 Code | S-PDSO-N5 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 2.3W Ta 30W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.3W |
Case Connection | DRAIN |
Turn On Delay Time | 8.4 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 9.7m Ω @ 12A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1850pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 12A Ta 14A Tc |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
Rise Time | 2.2ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 2.2 ns |
Turn-Off Delay Time | 20 ns |
Continuous Drain Current (ID) | 12A |
Threshold Voltage | 1.7V |
JEDEC-95 Code | MO-240BA |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.0097Ohm |
Drain to Source Breakdown Voltage | 40V |
Pulsed Drain Current-Max (IDM) | 60A |
Avalanche Energy Rating (Eas) | 25 mJ |
Max Junction Temperature (Tj) | 150°C |
Height | 800μm |
Length | 3.3mm |
Width | 3.3mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |