Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Number of Pins | 8 |
Weight | 165.33333mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
Series | PowerTrench® |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Number of Elements | 1 |
Power Dissipation-Max | 2W Ta 41W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2W |
Case Connection | DRAIN |
Turn On Delay Time | 13 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5m Ω @ 16.5A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3380pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 16.5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
Rise Time | 10ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 7 ns |
Turn-Off Delay Time | 32 ns |
Continuous Drain Current (ID) | 16.5A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 72A |
Drain-source On Resistance-Max | 0.005Ohm |
Drain to Source Breakdown Voltage | 20V |
Pulsed Drain Current-Max (IDM) | 36A |
Height | 950μm |
Length | 3mm |
Width | 3mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |