Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
Mount | Surface Mount |
Number of Pins | 8 |
Weight | 32.13mg |
Packaging | Tape & Reel (TR) |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Subcategory | FET General Purpose Power |
Max Power Dissipation | 3W |
Terminal Position | DUAL |
JESD-30 Code | S-PDSO-N5 |
Number of Elements | 1 |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 41W |
Case Connection | DRAIN |
Turn On Delay Time | 8 ns |
Transistor Application | SWITCHING |
Rise Time | 3ns |
Drain to Source Voltage (Vdss) | 25V |
Polarity/Channel Type | N-CHANNEL |
Fall Time (Typ) | 2 ns |
Turn-Off Delay Time | 25 ns |
Continuous Drain Current (ID) | 40A |
Threshold Voltage | 1.2V |
JEDEC-95 Code | MO-240BA |
Gate to Source Voltage (Vgs) | 12V |
Drain Current-Max (Abs) (ID) | 17A |
Drain to Source Breakdown Voltage | 25V |
Pulsed Drain Current-Max (IDM) | 60A |
Input Capacitance | 1.695nF |
Avalanche Energy Rating (Eas) | 29 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Drain to Source Resistance | 5.7mOhm |
Rds On Max | 5 mΩ |
Nominal Vgs | 1.2 V |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |