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FDMC86012

FDMC86012 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDMC86012
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 123
  • Description: FDMC86012 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 152.7mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.3W Ta 54W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 54W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.7m Ω @ 23A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5075pF @ 15V
Current - Continuous Drain (Id) @ 25°C 23A Ta
Gate Charge (Qg) (Max) @ Vgs 38nC @ 4.5V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 23A
JEDEC-95 Code MO-240BA
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.0027Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 230A
Avalanche Energy Rating (Eas) 337 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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