Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 17 hours ago) |
Contact Plating | Gold, Silver |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Number of Pins | 8 |
Weight | 165.33333mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2007 |
Series | PowerTrench® |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Resistance | 70MOhm |
Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
JESD-30 Code | S-PDSO-N5 |
Number of Elements | 1 |
Power Dissipation-Max | 2.3W Ta 40W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 40W |
Case Connection | DRAIN |
Turn On Delay Time | 8.2 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 51m Ω @ 4.6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 905pF @ 75V |
Current - Continuous Drain (Id) @ 25°C | 4.6A Ta 16A Tc |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Rise Time | 1.7ns |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 3.1 ns |
Turn-Off Delay Time | 14 ns |
Continuous Drain Current (ID) | 16A |
Threshold Voltage | 2.9V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 4.6A |
Drain to Source Breakdown Voltage | 150V |
Pulsed Drain Current-Max (IDM) | 20A |
Avalanche Energy Rating (Eas) | 34 mJ |
Height | 750μm |
Length | 3.3mm |
Width | 3.3mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |