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FDMC86260

FDMC86260 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDMC86260
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 140
  • Description: FDMC86260 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 20 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 152.7mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Base Part Number FDMC86260
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.3W Ta 54W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 54W
Case Connection DRAIN
Turn On Delay Time 9.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 34m Ω @ 5.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 75V
Current - Continuous Drain (Id) @ 25°C 5.4A Ta 16A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 2ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.3 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 16A
JEDEC-95 Code MO-240BA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5.4A
Drain-source On Resistance-Max 0.034Ohm
Drain to Source Breakdown Voltage 150V
Avalanche Energy Rating (Eas) 121 mJ
Height 750μm
Length 3.3mm
Width 3.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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