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FDMC86520DC

MOSFET N CH 60V 17A POWER33


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDMC86520DC
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 625
  • Description: MOSFET N CH 60V 17A POWER33 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 32.13mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series Dual Cool™, PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 3W Ta 73W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 73W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.3m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2790pF @ 30V
Current - Continuous Drain (Id) @ 25°C 17A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 6.6ns
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 40A
JEDEC-95 Code MO-240BA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0063Ohm
Drain to Source Breakdown Voltage 60V
Height 950μm
Length 3.3mm
Width 3.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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