Parameters | |
---|---|
Rise Time | 12ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 10 ns |
Turn-Off Delay Time | 38 ns |
Continuous Drain Current (ID) | 18A |
Threshold Voltage | 1.8V |
JEDEC-95 Code | MO-240BA |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 56A |
Drain-source On Resistance-Max | 0.0043Ohm |
Drain to Source Breakdown Voltage | 60V |
Pulsed Drain Current-Max (IDM) | 200A |
Avalanche Energy Rating (Eas) | 253 mJ |
Max Junction Temperature (Tj) | 150°C |
Height | 800μm |
Factory Lead Time | 1 Week |
Length | 3.4mm |
Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
Width | 3.4mm |
Mount | Surface Mount |
Radiation Hardening | No |
Mounting Type | Surface Mount |
RoHS Status | ROHS3 Compliant |
Package / Case | 8-PowerWDFN |
Number of Pins | 8 |
Weight | 152.7mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
JESD-30 Code | S-PDSO-N5 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 2.3W Ta 54W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.3W |
Case Connection | DRAIN |
Turn On Delay Time | 19 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 4.3m Ω @ 18A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 6705pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 18A Ta 56A Tc |
Gate Charge (Qg) (Max) @ Vgs | 88nC @ 10V |