FDMC89521L
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Weight | 196mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 17MOhm |
| Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
| Additional Feature | AVALANCHE ENERGY RATED |
| Max Power Dissipation | 800mW |
| JESD-30 Code | S-PDSO-N4 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.9W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7.9 ns |
| Power - Max | 1.9W Ta 16W Tc |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 17m Ω @ 8.2A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1635pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 8.2A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Rise Time | 2.1ns |
| Fall Time (Typ) | 1.7 ns |
| Turn-Off Delay Time | 18 ns |
| Continuous Drain Current (ID) | 8.2A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Feedback Cap-Max (Crss) | 15 pF |
| Height | 800μm |
| Length | 3mm |
| Width | 3mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
