FDMQ8205A
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 12-WDFN Exposed Pad |
| Weight | 210mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~85°C |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | GreenBridge™ |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 12 |
| Type | Bridge Rectifier |
| Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
| Applications | Power Over Ethernet (PoE) |
| Max Power Dissipation | 780mW |
| Voltage - Supply | 57V Max |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Number of Outputs | 2 |
| Output Voltage | 57V |
| Number of Elements | 4 |
| Configuration | COMPLEX |
| Operating Mode | ENHANCEMENT MODE |
| Current - Supply | 400μA |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Ratio - Input:Output | Bridge (2) |
| Drain Current-Max (Abs) (ID) | 1.7A |
| Drain-source On Resistance-Max | 0.051Ohm |
| Internal Switch(s) | Yes |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 125°C |
| Ambient Temperature Range High | 85°C |
| Height | 800μm |
| RoHS Status | ROHS3 Compliant |
FDMQ8205A Description
FDMQ8205A is GreenBridgeTM2 series of quad MOSFETs for a bridge application so that the input will be insensitive to the polarity of a power source coupled to the device. Many known bridge rectifier circuits can be configured using typical diodes. The conventional diode bridge has relatively high power loss that is undesirable in many applications. Especially, Power over Ethernet (PoE) Power Device (PD) application requires high-efficiency bridges because it should be operated with the limited power delivered from Power Source Equipment (PSE) which is classified by IEEE802.3at. FDMQ8205A is configured with low rDS(on) dual P-ch MOSFETs and N-ch MOSFETs so that it can reduce the power loss caused by the voltage drop, compared to the conventional diode bridge. FDMQ8205A enables the application to maximize the available power and voltage and to eliminate the thermal design problems in PoE PD applications.
FDMQ8205A GreenBridgeTM2 is compatible with IEEE802.3at PoE standard by not compromising detection and classification requirement as well as small backfeed voltage.
FDMQ8205A Features
Low Power Loss GreenBridgeTM Replaces Diode Bridge
Self Driving Circuitry for MOSFETs
Low rDS(on) 100V Rated MOSFETs
Maximizing Available Power and Voltage
Eliminating Thermal Design Problems
IEEE802.3 at Compatible
Meet Detection and Classification Requirement
Work with 2 and 4-pair Architecture
Small Backfeed Voltage
Compact MLP 4.5x5 Package
FDMQ8205A Applications
IP Phones
Network Cameras
Wireless Access Points
Thin Clients
Microcell
Femtocell
