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FDMS0302S

MOSFET Gaming/DT/Notebook/NVDC/Server


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDMS0302S
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 457
  • Description: MOSFET Gaming/DT/Notebook/NVDC/Server (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®, SyncFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 2
Power Dissipation-Max 2.5W Ta 89W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.9m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 7350pF @ 15V
Current - Continuous Drain (Id) @ 25°C 29A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 109nC @ 10V
Rise Time 8ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 49A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0019Ohm
Pulsed Drain Current-Max (IDM) 150A
DS Breakdown Voltage-Min 30V
Height 1mm
Length 6mm
Width 5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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