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FDMS0310S

MOSFET Gaming/DT/Notebook/NVDC/Server


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDMS0310S
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 563
  • Description: MOSFET Gaming/DT/Notebook/NVDC/Server (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench®, SyncFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 2
Power Dissipation-Max 2.5W Ta 46W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2820pF @ 15V
Current - Continuous Drain (Id) @ 25°C 19A Ta 42A Tc
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Rise Time 5ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 42A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 19A
Drain-source On Resistance-Max 0.004Ohm
Pulsed Drain Current-Max (IDM) 90A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 60 mJ
Height 1mm
Length 6mm
Width 5mm
RoHS Status ROHS3 Compliant
See Relate Datesheet

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