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FDMS039N08B

FDMS039N08B datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDMS039N08B
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 968
  • Description: FDMS039N08B datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 42 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.9m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7600pF @ 40V
Current - Continuous Drain (Id) @ 25°C 19.4A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) 19.4A
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0039Ohm
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 240 mJ
Height 1.05mm
Length 5mm
Width 6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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