Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Number of Pins | 8 |
Weight | 210mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
Series | UltraFET™ |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Resistance | 122MOhm |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 250V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Current Rating | 14A |
JESD-30 Code | R-PDSO-N5 |
Number of Elements | 1 |
Power Dissipation-Max | 2.5W Ta 78W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Case Connection | DRAIN |
Turn On Delay Time | 22 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 122m Ω @ 2.8A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2365pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 2.8A Ta 14A Tc |
Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
Rise Time | 10ns |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 12 ns |
Turn-Off Delay Time | 36 ns |
Continuous Drain Current (ID) | 2.8A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 250V |
Pulsed Drain Current-Max (IDM) | 30A |
Height | 750μm |
Length | 5mm |
Width | 6mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |