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FDMS3006SDC

MOSFET 30V N-Chan Dual Cool PowerTrench SyncFET


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDMS3006SDC
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 989
  • Description: MOSFET 30V N-Chan Dual Cool PowerTrench SyncFET (Kg)

Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 90mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Dual Cool™, PowerTrench®, SyncFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 3.3W Ta 89W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 89W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5725pF @ 15V
Current - Continuous Drain (Id) @ 25°C 34A Ta
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 5.9ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.5 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 34A
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 49A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 200A
Height 1.05mm
Length 5.1mm
Width 5.85mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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