Parameters | |
---|---|
ECCN Code | EAR99 |
Resistance | 14.5MOhm |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
JESD-30 Code | R-PDSO-N5 |
Number of Elements | 1 |
Power Dissipation-Max | 2.5W Ta 96W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Case Connection | DRAIN |
Turn On Delay Time | 16 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 14.5m Ω @ 11.5A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 4765pF @ 40V |
Current - Continuous Drain (Id) @ 25°C | 9.2A Ta 49A Tc |
Gate Charge (Qg) (Max) @ Vgs | 91nC @ 10V |
Rise Time | 9ns |
Factory Lead Time | 1 Week |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Fall Time (Typ) | 6 ns |
Mount | Surface Mount |
Turn-Off Delay Time | 48 ns |
Mounting Type | Surface Mount |
Continuous Drain Current (ID) | 9.2A |
Gate to Source Voltage (Vgs) | 20V |
Package / Case | 8-PowerTDFN |
Drain Current-Max (Abs) (ID) | 49A |
Number of Pins | 8 |
Drain to Source Breakdown Voltage | 75V |
Weight | 68.1mg |
Nominal Vgs | 1.8 V |
Height | 1.05mm |
Transistor Element Material | SILICON |
Length | 5mm |
Width | 6mm |
Operating Temperature | -55°C~150°C TJ |
Radiation Hardening | No |
REACH SVHC | No SVHC |
Packaging | Tape & Reel (TR) |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Published | 2009 |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |