Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Weight | 68.1mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Resistance | 14.8MOhm |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
JESD-30 Code | R-PDSO-F5 |
Number of Elements | 1 |
Power Dissipation-Max | 2.5W Ta 104W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Case Connection | DRAIN |
Turn On Delay Time | 25 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 14.8m Ω @ 8.9A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 4620pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 8.9A Ta 49A Tc |
Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
Rise Time | 15ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 6 ns |
Turn-Off Delay Time | 32 ns |
Continuous Drain Current (ID) | 8.9A |
Threshold Voltage | 3.5V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 49A |
Drain to Source Breakdown Voltage | 100V |
Pulsed Drain Current-Max (IDM) | 90A |
Nominal Vgs | 3.5 V |
Height | 1.05mm |
Length | 5mm |
Width | 6mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |