FDMS5352
| Parameters | |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| Continuous Drain Current (ID) | 13.6A |
| Threshold Voltage | 1.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 49A |
| Factory Lead Time | 1 Week |
| Terminal Position | DUAL |
| Drain to Source Breakdown Voltage | 60V |
| Avalanche Energy Rating (Eas) | 600 mJ |
| Height | 1.05mm |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Length | 5mm |
| Terminal Form | FLAT |
| Mount | Surface Mount |
| Width | 6mm |
| JESD-30 Code | R-PDSO-F5 |
| Radiation Hardening | No |
| Mounting Type | Surface Mount |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 8-PowerTDFN |
| Lead Free | Lead Free |
| Number of Pins | 8 |
| Power Dissipation-Max | 2.5W Ta 104W Tc |
| Weight | 68.1mg |
| Element Configuration | Single |
| Transistor Element Material | SILICON |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 2.5W |
| Published | 2009 |
| Case Connection | DRAIN |
| Series | PowerTrench® |
| Turn On Delay Time | 19 ns |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| FET Type | N-Channel |
| Part Status | Active |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6.7m Ω @ 13.6A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Input Capacitance (Ciss) (Max) @ Vds | 6940pF @ 30V |
| Number of Terminations | 5 |
| Current - Continuous Drain (Id) @ 25°C | 13.6A Ta 49A Tc |
| ECCN Code | EAR99 |
| Gate Charge (Qg) (Max) @ Vgs | 131nC @ 10V |
| Rise Time | 11ns |
| Resistance | 6.7MOhm |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Fall Time (Typ) | 7 ns |
| Turn-Off Delay Time | 58 ns |
See Relate Datesheet
