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FDMS7556S

MOSFET N-CH 25V 35A POWER56


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDMS7556S
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 385
  • Description: MOSFET N-CH 25V 35A POWER56 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 90mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®, SyncFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 96W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 96W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 8965pF @ 13V
Current - Continuous Drain (Id) @ 25°C 35A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 133nC @ 10V
Rise Time 9ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.3 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) 49A
Threshold Voltage 1.6V
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 35A
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 25V
Nominal Vgs 1.6 V
Height 1.05mm
Length 5mm
Width 6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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