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FDMS7578

MOSFET N-CH 25V 17A POWER56


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDMS7578
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 902
  • Description: MOSFET N-CH 25V 17A POWER56 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 74mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 33W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 33W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.8m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1625pF @ 13V
Current - Continuous Drain (Id) @ 25°C 17A Ta 28A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 2.6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.2 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 28A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 63A
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 40 mJ
Nominal Vgs 1.6 V
Height 1.05mm
Length 5mm
Width 6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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