banner_page

FDMS7580

MOSFET 25V 20A 7.5mOhm N-Ch PowerTrench


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDMS7580
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 891
  • Description: MOSFET 25V 20A 7.5mOhm N-Ch PowerTrench (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 27W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 59W
Case Connection DRAIN
Turn On Delay Time 7.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 13V
Current - Continuous Drain (Id) @ 25°C 15A Ta 29A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 6.8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.5 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 15A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 49A
Drain-source On Resistance-Max 0.0075Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 32 mJ
Nominal Vgs 1.6 V
Height 1.05mm
Length 5mm
Width 6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good