Parameters | |
---|---|
Current - Continuous Drain (Id) @ 25°C | 36A Ta 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 209nC @ 10V |
Rise Time | 24ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 21 ns |
Turn-Off Delay Time | 83 ns |
Continuous Drain Current (ID) | 60A |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
Threshold Voltage | 1.9V |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Gate to Source Voltage (Vgs) | 20V |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Weight | 90mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Drain Current-Max (Abs) (ID) | 36A |
Packaging | Tape & Reel (TR) |
Drain to Source Breakdown Voltage | 30V |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pulsed Drain Current-Max (IDM) | 450A |
Pbfree Code | yes |
Avalanche Energy Rating (Eas) | 544 mJ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Nominal Vgs | 1.9 V |
Number of Terminations | 5 |
Height | 1.05mm |
ECCN Code | EAR99 |
Length | 5mm |
Width | 6mm |
Resistance | 1MOhm |
Radiation Hardening | No |
Terminal Finish | Tin (Sn) |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Subcategory | FET General Purpose Power |
Lead Free | Lead Free |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
JESD-30 Code | R-PDSO-F5 |
Number of Elements | 1 |
Power Dissipation-Max | 2.5W Ta 104W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Case Connection | DRAIN |
Turn On Delay Time | 28 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 0.99m Ω @ 36A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 14965pF @ 15V |