Parameters | |
---|---|
Power Dissipation | 125W |
Case Connection | DRAIN |
Turn On Delay Time | 14 ns |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
FET Type | N-Channel |
Mount | Surface Mount |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 7.5m Ω @ 14.5A, 10V |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Number of Pins | 8 |
Weight | 90mg |
Input Capacitance (Ciss) (Max) @ Vds | 3135pF @ 50V |
Transistor Element Material | SILICON |
Current - Continuous Drain (Id) @ 25°C | 14.5A Ta 60A Tc |
Operating Temperature | -55°C~150°C TJ |
Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
Packaging | Tape & Reel (TR) |
Series | Dual Cool™, PowerTrench® |
Rise Time | 8.2ns |
JESD-609 Code | e3 |
Pbfree Code | yes |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Vgs (Max) | ±20V |
Fall Time (Typ) | 5.5 ns |
Number of Terminations | 5 |
Turn-Off Delay Time | 25 ns |
ECCN Code | EAR99 |
Continuous Drain Current (ID) | 14.5A |
Resistance | 7.5MOhm |
JEDEC-95 Code | MO-240AA |
Terminal Finish | Tin (Sn) |
Gate to Source Voltage (Vgs) | 20V |
Subcategory | FET General Purpose Power |
Drain Current-Max (Abs) (ID) | 60A |
Drain to Source Breakdown Voltage | 100V |
Technology | MOSFET (Metal Oxide) |
Pulsed Drain Current-Max (IDM) | 200A |
Max Junction Temperature (Tj) | 150°C |
Height | 1.05mm |
Terminal Form | FLAT |
Length | 5.1mm |
Width | 5.85mm |
JESD-30 Code | R-PDSO-F5 |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Number of Elements | 1 |
Lead Free | Lead Free |
Number of Channels | 1 |
Power Dissipation-Max | 3.2W Ta 125W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |