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FDMS86150

FDMS86150 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDMS86150
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 600
  • Description: FDMS86150 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4065pF @ 50V
Current - Continuous Drain (Id) @ 25°C 16A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Rise Time 8.3ns
Factory Lead Time 1 Week
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Fall Time (Typ) 6 ns
Mount Surface Mount
Turn-Off Delay Time 28 ns
Mounting Type Surface Mount
Continuous Drain Current (ID) 60A
Package / Case 8-PowerTDFN
JEDEC-95 Code MO-240AA
Number of Pins 8
Weight 56.5mg
Gate to Source Voltage (Vgs) 20V
Transistor Element Material SILICON
Drain to Source Breakdown Voltage 100V
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Pulsed Drain Current-Max (IDM) 300A
Series PowerTrench®
Avalanche Energy Rating (Eas) 726 mJ
JESD-609 Code e3
Height 1.05mm
Pbfree Code yes
Part Status Active
Length 5.1mm
Width 6.25mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Radiation Hardening No
RoHS Status ROHS3 Compliant
Number of Terminations 5
Lead Free Lead Free
ECCN Code EAR99
Terminal Finish TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.7W Ta 156W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 156W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.85m Ω @ 16A, 10V
See Relate Datesheet

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