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FDMS86350

FDMS86350 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDMS86350
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 501
  • Description: FDMS86350 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 56.5mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code R-PDSO-N5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.7W Ta 156W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.7W
Case Connection DRAIN
Turn On Delay Time 50 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.4m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10680pF @ 40V
Current - Continuous Drain (Id) @ 25°C 25A Ta 130A Tc
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V
Rise Time 34ns
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 25A
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0024Ohm
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 300A
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Length 5.1mm
Width 6.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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