banner_page

FDMS8820

FDMS8820 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDMS8820
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 599
  • Description: FDMS8820 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Fall Time (Typ) 13 ns
Turn-Off Delay Time 41 ns
Continuous Drain Current (ID) 116A
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.002Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 294 mJ
Height 1.05mm
Length 5mm
Width 6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 78W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 78W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5315pF @ 15V
Current - Continuous Drain (Id) @ 25°C 28A Ta 116A Tc
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good