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FDMS8880

MOSFET N-CH 30V 13.5A POWER56


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDMS8880
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 156
  • Description: MOSFET N-CH 30V 13.5A POWER56 (Kg)

Details

Tags

Parameters
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 13.5A
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 60 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code R-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 42W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1585pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13.5A Ta 21A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
See Relate Datesheet

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