Parameters | |
---|---|
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 170mOhm |
Subcategory | Other Transistors |
Voltage - Rated DC | -60V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -1.25A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 500mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 500mW |
Turn On Delay Time | 6.5 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 170m Ω @ 1.25A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 430pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 1.25A Ta |
Gate Charge (Qg) (Max) @ Vgs | 13.8nC @ 10V |
Rise Time | 8ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 8 ns |
Turn-Off Delay Time | 16.5 ns |
Continuous Drain Current (ID) | 1.2A |
Threshold Voltage | -1.6V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -60V |
Dual Supply Voltage | -60V |
Max Junction Temperature (Tj) | 150°C |
Nominal Vgs | 20 V |
Height | 1.22mm |
Length | 2.92mm |
Width | 1.4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 15 hours ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Weight | 30mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2000 |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |