banner_page

FDP020N06B-F102

MOSFET N-Channel PwrTrench 60V 313A 2mOhm


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDP020N06B-F102
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 975
  • Description: MOSFET N-Channel PwrTrench 60V 313A 2mOhm (Kg)

Details

Tags

Parameters
Power Dissipation-Max 333W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 20930pF @ 30V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 268nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 120A
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series PowerTrench®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Configuration Single
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good