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FDP085N10A-F102

MOSFET N-CH 100V 96A TO-220-3


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDP085N10A-F102
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 529
  • Description: MOSFET N-CH 100V 96A TO-220-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series PowerTrench®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 188W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 188W
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5m Ω @ 96A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2695pF @ 50V
Current - Continuous Drain (Id) @ 25°C 96A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 96A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Height 15.215mm
Length 10.36mm
Width 4.672mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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