Parameters | |
---|---|
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 150W Tc |
Operating Mode | ENHANCEMENT MODE |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 7.5m Ω @ 59A, 10V |
Vgs(th) (Max) @ Id | 5.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 7.73pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
Drain to Source Voltage (Vdss) | 55V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
JEDEC-95 Code | TO-220AB |
Drain Current-Max (Abs) (ID) | 100A |
Drain-source On Resistance-Max | 0.0075Ohm |
Pulsed Drain Current-Max (IDM) | 390A |
DS Breakdown Voltage-Min | 55V |
Avalanche Energy Rating (Eas) | 365 mJ |
RoHS Status | ROHS3 Compliant |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Series | PowerTrench® |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Reach Compliance Code | unknown |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | COMMERCIAL |
Number of Elements | 1 |