Parameters | |
---|---|
Series | Automotive, AEC-Q101, UltraFET™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Power Dissipation-Max | 375W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 375W |
Case Connection | DRAIN |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 7m Ω @ 80A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3565pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 80A Tc |
Gate Charge (Qg) (Max) @ Vgs | 269nC @ 20V |
Rise Time | 34ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 23 ns |
Turn-Off Delay Time | 37 ns |
Continuous Drain Current (ID) | 80A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.007Ohm |
Drain to Source Breakdown Voltage | 55V |
Avalanche Energy Rating (Eas) | 860 mJ |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Weight | 1.8g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |