Parameters | |
---|---|
Drain to Source Breakdown Voltage | 40V |
Avalanche Energy Rating (Eas) | 720 mJ |
RoHS Status | ROHS3 Compliant |
Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Weight | 1.8g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Series | Automotive, AEC-Q101, PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 254W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 254W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 3.1m Ω @ 80A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 12200pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 23A Ta 80A Tc |
Gate Charge (Qg) (Max) @ Vgs | 235nC @ 10V |
Rise Time | 19.3ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 17.2 ns |
Turn-Off Delay Time | 57 ns |
Continuous Drain Current (ID) | 80A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 23A |
Drain-source On Resistance-Max | 0.0031Ohm |