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FDP8442-F085

MOSFET N-CH 40V 80A TO-220


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDP8442-F085
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 514
  • Description: MOSFET N-CH 40V 80A TO-220 (Kg)

Details

Tags

Parameters
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 720 mJ
RoHS Status ROHS3 Compliant
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series Automotive, AEC-Q101, PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 254W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 254W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.1m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 23A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs 235nC @ 10V
Rise Time 19.3ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 17.2 ns
Turn-Off Delay Time 57 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 23A
Drain-source On Resistance-Max 0.0031Ohm
See Relate Datesheet

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