Parameters | |
---|---|
Gate Charge (Qg) (Max) @ Vgs | 222nC @ 10V |
Rise Time | 135ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 59 ns |
Turn-Off Delay Time | 64 ns |
Continuous Drain Current (ID) | 80A |
Threshold Voltage | 1.6V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 30V |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Pulsed Drain Current-Max (IDM) | 556A |
Contact Plating | Tin |
Mount | Through Hole |
Height | 9.4mm |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Length | 10.67mm |
Number of Pins | 3 |
Width | 4.83mm |
Weight | 1.8g |
REACH SVHC | No SVHC |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
RoHS Status | ROHS3 Compliant |
Published | 2006 |
Lead Free | Lead Free |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 2.5MOhm |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 30V |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 80A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 254W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 254W |
Turn On Delay Time | 35 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.5m Ω @ 80A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 12240pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 80A Tc |