FDP8870
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Through Hole |
| Package / Case | TO-220AB |
| Number of Pins | 3 |
| Weight | 1.8g |
| Packaging | Tube |
| Published | 2004 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 4.1MOhm |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 160W |
| Current Rating | 160A |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 160W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
| Transistor Application | SWITCHING |
| Rise Time | 105ns |
| Drain to Source Voltage (Vdss) | 30V |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 46 ns |
| Turn-Off Delay Time | 70 ns |
| Continuous Drain Current (ID) | 156A |
| Threshold Voltage | 2.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Input Capacitance | 5.2nF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 4.1mOhm |
| Rds On Max | 4.1 mΩ |
| Nominal Vgs | 2.5 V |
| Height | 9.4mm |
| Length | 10.67mm |
| Width | 4.83mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
