FDP8896
| Parameters | |
|---|---|
| Transistor Element Material | SILICON |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Operating Temperature | -55°C~175°C TJ |
| Fall Time (Typ) | 44 ns |
| Turn-Off Delay Time | 56 ns |
| Continuous Drain Current (ID) | 92A |
| Packaging | Tube |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Published | 2004 |
| Avalanche Energy Rating (Eas) | 74 mJ |
| Series | PowerTrench® |
| Height | 9.4mm |
| Length | 10.67mm |
| Width | 4.83mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| JESD-609 Code | e3 |
| Lead Free | Lead Free |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 5.9MOhm |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.29.00.95 |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 92A |
| Number of Elements | 1 |
| Voltage | 30V |
| Power Dissipation-Max | 80W Tc |
| Element Configuration | Single |
| Current | 60A |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 80W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9 ns |
| FET Type | N-Channel |
| Factory Lead Time | 1 Week |
| Transistor Application | SWITCHING |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Rds On (Max) @ Id, Vgs | 5.9m Ω @ 35A, 10V |
| Mount | Through Hole |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 2525pF @ 15V |
| Package / Case | TO-220-3 |
| Current - Continuous Drain (Id) @ 25°C | 16A Ta 92A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
| Number of Pins | 3 |
| Rise Time | 103ns |
See Relate Datesheet
