Parameters | |
---|---|
Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Weight | 230.4mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | Automotive, AEC-Q101, UltraFET™ |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Number of Elements | 1 |
Power Dissipation-Max | 2.5W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Turn On Delay Time | 22 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 70m Ω @ 3.9A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2535pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 3.9A Ta |
Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
Rise Time | 10ns |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 10 ns |
Turn-Off Delay Time | 35 ns |
Continuous Drain Current (ID) | 3.9A |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.07Ohm |
Drain to Source Breakdown Voltage | 200V |
Feedback Cap-Max (Crss) | 45 pF |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |