Parameters | |
---|---|
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1990pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 8.9A Ta |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Rise Time | 14ns |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 13 ns |
Turn-Off Delay Time | 31 ns |
Continuous Drain Current (ID) | 8.9A |
Threshold Voltage | 4V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 80V |
Nominal Vgs | 4 V |
Height | 1.5mm |
Length | 5mm |
Width | 4mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Weight | 130mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2003 |
Series | PowerTrench® |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Resistance | 16MOhm |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 80V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 8.9A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 2.5W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Turn On Delay Time | 13 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 16m Ω @ 8.9A, 10V |