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FDS4465-F085

MOSFET P-CH 20V 8-SOIC


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDS4465-F085
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 158
  • Description: MOSFET P-CH 20V 8-SOIC (Kg)

Details

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Parameters
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 230.4mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5m Ω @ 13.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8237pF @ 10V
Current - Continuous Drain (Id) @ 25°C 13.5A Ta
Gate Charge (Qg) (Max) @ Vgs 120nC @ 4.5V
Rise Time 24ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 140 ns
Turn-Off Delay Time 300 ns
Continuous Drain Current (ID) 13.5A
Gate to Source Voltage (Vgs) 8V
Pulsed Drain Current-Max (IDM) 50A
DS Breakdown Voltage-Min 20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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