Parameters | |
---|---|
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Weight | 230.4mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | Automotive, AEC-Q101, PowerTrench® |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Number of Elements | 1 |
Power Dissipation-Max | 2.5W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Case Connection | DRAIN |
Turn On Delay Time | 20 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 8.5m Ω @ 13.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 8237pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 13.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 4.5V |
Rise Time | 24ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 140 ns |
Turn-Off Delay Time | 300 ns |
Continuous Drain Current (ID) | 13.5A |
Gate to Source Voltage (Vgs) | 8V |
Pulsed Drain Current-Max (IDM) | 50A |
DS Breakdown Voltage-Min | 20V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |