Parameters | |
---|---|
Input Capacitance (Ciss) (Max) @ Vds | 1958pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 9.3A 5.6A |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 4.5V |
Rise Time | 15ns |
Drain to Source Voltage (Vdss) | 30V 20V |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Fall Time (Typ) | 25 ns |
Turn-Off Delay Time | 40 ns |
Continuous Drain Current (ID) | 9.3A |
Threshold Voltage | 1.6V |
Gate to Source Voltage (Vgs) | 8V |
Drain to Source Breakdown Voltage | -20V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Logic Level Gate |
Height | 1.575mm |
Length | 4.9mm |
Width | 3.9mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Weight | 187mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2001 |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Resistance | 18MOhm |
Subcategory | Other Transistors |
Max Power Dissipation | 1W |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | 9.3A |
Number of Elements | 2 |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Turn On Delay Time | 15 ns |
FET Type | N and P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 18m Ω @ 9.3A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |