FDS6670AS
| Parameters | |
|---|---|
| Terminal Form | GULL WING |
| Current Rating | 13.5A |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.5W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 9m Ω @ 13.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1540pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 13.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Rise Time | 5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 18 ns |
| Turn-Off Delay Time | 27 ns |
| Factory Lead Time | 1 Week |
| Continuous Drain Current (ID) | 13.5A |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Gate to Source Voltage (Vgs) | 20V |
| Contact Plating | Tin |
| Drain to Source Breakdown Voltage | 30V |
| Mount | Surface Mount |
| Height | 1.5mm |
| Length | 5mm |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Width | 4mm |
| Radiation Hardening | No |
| Number of Pins | 8 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Weight | 130mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | PowerTrench®, SyncFET™ |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 9MOhm |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Voltage - Rated DC | 30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
See Relate Datesheet
