Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Weight | 130mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
Series | PowerTrench® |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 4.6MOhm |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Subcategory | Other Transistors |
Voltage - Rated DC | -30V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | -20A |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 2.5W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Turn On Delay Time | 20 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 4.6m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 7540pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 20A Ta |
Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
Rise Time | 9ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±25V |
Fall Time (Typ) | 380 ns |
Turn-Off Delay Time | 660 ns |
Continuous Drain Current (ID) | -20A |
Threshold Voltage | -1.8V |
Gate to Source Voltage (Vgs) | 25V |
Drain to Source Breakdown Voltage | -30V |
Dual Supply Voltage | 30V |
Max Junction Temperature (Tj) | 150°C |
Nominal Vgs | 1.8 V |
Height | 1.75mm |
Length | 5mm |
Width | 4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |