Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Mount | Surface Mount |
Package / Case | SOIC |
Number of Pins | 8 |
Weight | 130mg |
Packaging | Tape & Reel (TR) |
Published | 2004 |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 7.5MOhm |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 30V |
Max Power Dissipation | 1W |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | 14A |
Number of Elements | 1 |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5mW |
Turn On Delay Time | 10 ns |
Transistor Application | SWITCHING |
Rise Time | 7ns |
Drain to Source Voltage (Vdss) | 30V |
Polarity/Channel Type | N-CHANNEL |
Fall Time (Typ) | 16 ns |
Turn-Off Delay Time | 44 ns |
Continuous Drain Current (ID) | 14A |
Threshold Voltage | 1.7V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 30V |
Dual Supply Voltage | 30V |
Input Capacitance | 2.31nF |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Drain to Source Resistance | 5.7mOhm |
Rds On Max | 7.5 mΩ |
Nominal Vgs | 1.7 V |
Height | 1.5mm |
Length | 5mm |
Width | 4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |