Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Weight | 187mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
Series | PowerTrench®, SyncFET™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 22mOhm |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Max Power Dissipation | 900mW |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Qualification Status | Not Qualified |
Number of Elements | 2 |
Number of Channels | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2W |
Turn On Delay Time | 8 ns |
FET Type | 2 N-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 22m Ω @ 7.5A, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 7.5A |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 5V |
Rise Time | 8ns |
Fall Time (Typ) | 8 ns |
Turn-Off Delay Time | 24 ns |
Continuous Drain Current (ID) | 7.5mA |
Threshold Voltage | 1.7V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 7.5A |
Drain to Source Breakdown Voltage | 30V |
Dual Supply Voltage | 30V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Max Junction Temperature (Tj) | 150°C |
FET Feature | Logic Level Gate |
Nominal Vgs | 1.7 V |
Height | 1.75mm |
Length | 5mm |
Width | 4mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |