Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Weight | 130mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2000 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Resistance | 47MOhm |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | -20V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | -5A |
Number of Elements | 1 |
Power Dissipation-Max | 2.5W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Turn On Delay Time | 8 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 47m Ω @ 5A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1130pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 28nC @ 5V |
Rise Time | 23ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 90 ns |
Turn-Off Delay Time | 260 ns |
Continuous Drain Current (ID) | 5mA |
Threshold Voltage | -600mV |
Gate to Source Voltage (Vgs) | 8V |
Drain Current-Max (Abs) (ID) | 5A |
Drain to Source Breakdown Voltage | -20V |
Height | 1.5mm |
Length | 5mm |
Width | 4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |