Parameters | |
---|---|
Packaging | Tape & Reel (TR) |
Published | 2002 |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Resistance | 130MOhm |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | -30V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | -3.4A |
Number of Elements | 1 |
Power Dissipation-Max | 2.5W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Turn On Delay Time | 4.5 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 130m Ω @ 1A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 205pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 3.4A Ta |
Gate Charge (Qg) (Max) @ Vgs | 3.5nC @ 5V |
Rise Time | 12.5ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±25V |
Fall Time (Typ) | 2 ns |
Turn-Off Delay Time | 11 ns |
Continuous Drain Current (ID) | 3.4A |
Threshold Voltage | -1.8V |
Gate to Source Voltage (Vgs) | 25V |
Drain to Source Breakdown Voltage | -30V |
Nominal Vgs | -1.8 V |
Height | 1.575mm |
Length | 4.9mm |
Width | 3.9mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Weight | 230.4mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |