Parameters | |
---|---|
Lifecycle Status | LIFETIME (Last Updated: 1 week ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Weight | 230.4mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 1999 |
Series | Automotive, AEC-Q101 |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Number of Elements | 1 |
Power Dissipation-Max | 2.5W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Turn On Delay Time | 6.5 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 130m Ω @ 3.5A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 405pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 3.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 4.5V |
Rise Time | 20ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 21 ns |
Turn-Off Delay Time | 31 ns |
Continuous Drain Current (ID) | 3.5A |
Gate to Source Voltage (Vgs) | 8V |
Drain-source On Resistance-Max | 0.13Ohm |
Drain to Source Breakdown Voltage | -20V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |