Parameters | |
---|---|
Lifecycle Status | LAST SHIPMENTS (Last Updated: 9 hours ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 4 |
Weight | 250.2mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2002 |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 50mOhm |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | -20V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | -5.5A |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 3W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3W |
Case Connection | DRAIN |
Turn On Delay Time | 8 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 50m Ω @ 6A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1187pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 6A Ta |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 4.5V |
Rise Time | 15ns |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 30 ns |
Turn-Off Delay Time | 45 ns |
Continuous Drain Current (ID) | 6A |
Threshold Voltage | -600mV |
Gate to Source Voltage (Vgs) | 8V |
Drain Current-Max (Abs) (ID) | 6A |
Drain to Source Breakdown Voltage | -20V |
Pulsed Drain Current-Max (IDM) | 30A |
Dual Supply Voltage | 20V |
Max Junction Temperature (Tj) | 150°C |
Nominal Vgs | -600 mV |
Height | 1.8mm |
Length | 6.5mm |
Width | 3.56mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |