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FDT86106LZ

FDT86106LZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDT86106LZ
  • Package: TO-261-4, TO-261AA
  • Datasheet: -
  • Stock: 705
  • Description: FDT86106LZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Parameters
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 2.2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.2W
Case Connection DRAIN
Turn On Delay Time 3.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 108m Ω @ 3.2A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 315pF @ 50V
Current - Continuous Drain (Id) @ 25°C 3.2A Ta
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Rise Time 1.3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 1.5 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 3.2A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Factory Lead Time 1 Week
Nominal Vgs 1.5 V
Feedback Cap-Max (Crss) 5 pF
Lifecycle Status ACTIVE (Last Updated: 11 hours ago)
Height 1.7mm
Length 3.7mm
Mount Surface Mount
Width 6.7mm
Mounting Type Surface Mount
Radiation Hardening No
REACH SVHC No SVHC
Package / Case TO-261-4, TO-261AA
RoHS Status ROHS3 Compliant
Number of Pins 4
Weight 250.2mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
See Relate Datesheet

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