Parameters | |
---|---|
Terminal Form | GULL WING |
Number of Elements | 1 |
Power Dissipation-Max | 2.2W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.2W |
Case Connection | DRAIN |
Turn On Delay Time | 3.8 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 108m Ω @ 3.2A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 315pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 3.2A Ta |
Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
Rise Time | 1.3ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 1.5 ns |
Turn-Off Delay Time | 10 ns |
Continuous Drain Current (ID) | 3.2A |
Threshold Voltage | 1.5V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 100V |
Factory Lead Time | 1 Week |
Nominal Vgs | 1.5 V |
Feedback Cap-Max (Crss) | 5 pF |
Lifecycle Status | ACTIVE (Last Updated: 11 hours ago) |
Height | 1.7mm |
Length | 3.7mm |
Mount | Surface Mount |
Width | 6.7mm |
Mounting Type | Surface Mount |
Radiation Hardening | No |
REACH SVHC | No SVHC |
Package / Case | TO-261-4, TO-261AA |
RoHS Status | ROHS3 Compliant |
Number of Pins | 4 |
Weight | 250.2mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |